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Molecular beam epitaxy growth of quantum devices |
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| Affiliation: | 1.State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;2.Frontier Science Center for Quantum Information, Beijing 100084, China;3.Beijing Institute of Quantum Information Science, Beijing 100193, China |
| Abstract: | The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment. Here, I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum. The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way. |
| Keywords: | molecular beam epitaxy fabrication ultrahigh vacuum quantum computation |
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