Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress |
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| Affiliation: | 1.Engineering Research Center of IoT Technology Applications(Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;2.Wuxi NCE Power Company, Ltd., Wuxi 214028, China |
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| Abstract: | The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO2 interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring. |
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| Keywords: | shield gate trench MOSFET repetitive unclamped inductive switching stress degradation static and dynamic parameters |
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