Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors |
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| Affiliation: | 1.Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;2.School of Nuclear Science and technology, Xi'an Jiaotong University, Xi'an 710049, China;3.National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China |
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| Abstract: | We investigate the angular dependence of proton-induced single event transient (SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume. |
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| Keywords: | heterojunction bipolar transistor proton irradiation single event transient angular effect |
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