Valley-dependent transport in strain engineering graphene heterojunctions |
| |
Affiliation: | 1.Department of Physics, Hangzhou Dianzi University, Hangzhou 310018, China;2.Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation(Ministry of Education), Hunan Normal University, Changsha 410081, China;3.Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore 117576, Singapore |
| |
Abstract: | We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices. |
| |
Keywords: | strain engineering valley-dependent separation graphene on-site energy |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|