GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model |
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| Affiliation: | 1.Faculty of Science, Beijing University of Technology, Beijing 100124, China;2.Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China |
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| Abstract: | Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices. |
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| Keywords: | GeSn thermophotovoltaic device active layer photovoltaic cell |
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