| Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition |
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| 引用本文： | 邢海英,徐章程,崔明启,谢玉芯,张国义.Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition[J].中国物理 B,2014(10):542-544. |
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| 作者姓名： | 邢海英 徐章程 崔明启 谢玉芯 张国义 |
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| 作者单位： | School of Electronics and Information Engineering, Tianjin Polytechnic University;Institute of High Energy Physics, Chinese Academy of Sciences;Research Center for Wide-band Semiconductors, Peking University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(Grant Nos.61204008,11075176,and 60976090);the National Key Basic Research Special Foundation of China(Grant No.2013CB328705) |
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| 摘 要： | Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
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| 关 键 词： | 金属有机化学气相沉积 光致发光 有机金属 能隙 薄膜 磁特性 MOCVD 强度比 |
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