Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Authors:	Peng Chao;Hu Zhi-Yuan;Ning Bing-Xu;Huang Hui-Xiang;Fan Shuang;Zhang Zheng-Xuan;Bi Da-Wei;En Yun-Fei

Abstract:	partially depleted silicon-on-isolator n-MOSFET, sidewall implant, shallow trench isolation, totalionizing dose

Keywords:	partially depleted silicon-on-isolator n-MOSFET sidewall implant shallow trench isolation total ionizing dose
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