Strain effects on the polarized optical properties of InGaN with different In compositions |
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| Authors: | Tao Ren-Chun Yu Tong-Jun Jia Chuan-Yu Chen Zhi-Zhong Qin Zhi-Xin and Zhang Guo-Yi |
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| Affiliation: | State Key Laboratory for Mesoscopic Physics,
School of Physics, Peking University, Beijing 100871,
China |
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| Abstract: | Strain effects on the polarized optical properties of c-plane and
m-plane Inx1-xN were discussed for different In
compositions (x=0, 0.05, 0.10, 0.15) by analyzing the relative
oscillator strength (ROS) and energy level splitting of the three
transitions related to the top three valence bands (VBs). The ROS
was calculated by applying the effective-mass Hamiltonian based on
k. p perturbation theory. For c-plane
InxGa1-xN, it was found that the ROS of | X >
and | Y >-like states were superposed with each
other. Especially, under compressive strain, they dominated in the
top VB whose energy level also went up with strain, while the ROS of the
| Z >-like state decreased in the second band.
For m-plane InxGa1-xN under compressive strain, the top
three VBs were dominated by | X >, | Z
>, and | Y >-like states,
respectively, which led to nearly linearly-polarized light
emissions. For the top VB, ROS difference between | X
> and | Z >-like states became
larger with compressive strain.
It was also found that such tendencies were more evident in layers
with higher In compositions. As a result, there would be more TE modes
in total emissions from both c-plane and m-plane InGaN with compressive
strain and In content, leading to a larger polarization degree.
Experimental results of luminescence from InGaN/GaN quantum
wells (QWs) showed good coincidence with our calculations. |
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| Keywords: | GaN polarization degree m-plane relative oscillator strength |
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