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Gate-to-body tunneling current model for silicon-on-insulator MOSFETs
Abstract:A gate-to-body tunneling current model for silicon-on-insulator(SOI) devices is simulated.As verified by the measured data,the model,considering both gate voltage and drain voltage dependence as well as image force-induced barrier low effect,provides a better prediction of the tunneling current and gate-induced floating body effect than the BSIMSOI4model.A delayed gate-induced floating body effect is also predicted by the model.
Keywords:gate-to-body tunneling  gate-induced floating body effect  image force-induced barrier low effect  silicon-on-insulator
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