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Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi_2Sr_2Co_2O_y/Si heterojunction
Abstract:A Bi2Sr2Co2O y/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2O y film on a commercial n-type silicon wafer by pulsed laser deposition.Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K.The transport mechanism under the forward bias can be attributed to a trapfilled space-charge-limited current conduction mechanism.Under the irradiation of a 532-nm continuous wave laser,a clear photovoltaic effect is observed and the magnitude of photovoltage increases as the temperature decreases.The results demonstrate the potential application of a Bi2Sr2Co2O y-based heterojunction in the photoelectronic devices.
Keywords:BiSrCoOy/Si heterojunction  rectifying characteristics  photovoltaic effect  space-charge-limited current
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