| High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications |
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| 作者姓名： | 王鹏飞 宓珉瀚 张濛 祝杰杰 周雨威 刘捷龙 刘思佳 杨凌 侯斌 马晓华 郝跃 |
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| 作者单位： | 1.Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;2.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;3.Xidian University Guangzhou Institute of Technology, Guangzhou 510555, China |
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| 基金项目： | supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Research and Development Plan of Key Fields in Guangzhou(Grant No.202103020002)。 |
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| 摘 要： | We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in DVC-HEMT.The fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d Bm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.
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| 关 键 词： | ALGAN/GAN LINEARITY 1-dB compression point millimeter-wave application |
| 收稿时间： | 2021-07-13 |
High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications |
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| Pengfei Wang,Minhan Mi,Meng Zhang,Jiejie Zhu,Yuwei Zhou,Jielong Liu,Sijia Liu,Ling Yang,Bin Hou,Xiaohua Ma,Yue Hao.High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications[J].Chinese Physics B,2022,31(2):27103-027103. |
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| Authors: | Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou Jielong Liu Sijia Liu Ling Yang Bin Hou Xiaohua Ma Yue Hao |
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| Affiliation: | 1.Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;2.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;3.Xidian University Guangzhou Institute of Technology, Guangzhou 510555, China |
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| Abstract: | We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-Vth coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (Vth) values including the slant recess element and planar element in parallel along the gate width with N2O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (Gm) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened fT/fmax-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (Pout) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P1 dB) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential. |
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| Keywords: | AlGaN/GaN linearity 1-dB compression point millimeter-wave application |
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