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A new manganese-based single-molecule magnet with a record-high antiferromagnetic phase transition temperature
作者姓名:林猛  安霞  黎明  云全新  李敏  李志强  刘朋强  张兴  黄如
基金项目:Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601) and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).
摘    要:In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 cm-2.eV-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor (MOS) capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

关 键 词:MOS场效应管  二氧化锗  离子氧化  N20  钝化层  界面态密度  GE  制造

Fabricating GeO2 passivation layer by N20 plasma oxidation for Ge NMOSFETs application
Lin Meng,An Xia,Li Ming,Yun Quan-Xin,Li Min,Li Zhi-Qiang,Liu Peng-Qiang,Zhang Xing,Huang Ru.A new manganese-based single-molecule magnet with a record-high antiferromagnetic phase transition temperature[J].Chinese Physics B,2014(6):538-541.
Authors:Lin Meng  An Xia  Li Ming  Yun Quan-Xin  Li Min  Li Zhi-Qiang  Liu Peng-Qiang  Zhang Xing  Huang Ru
Affiliation:Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Abstract:Ge, GeO2 passivation, N2O plasma oxidation, Ge NMOSFETs
Keywords:Ge  GeO2 passivation  N2O plasma oxidation  Ge NMOSFETs
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