Growth and properties of wide spectral white light emitting diodes |
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| Authors: | Xie Zi-Li Zhang Rong Fu De-Yi Liu Bin Xiu Xiang-Qian Hua Xue-Mei Zhao Hong Chen Peng Han Ping Shi Yi and Zheng You-Dou |
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| Affiliation: | School of Electronics and Engineering, Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China |
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| Abstract: | Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum. |
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| Keywords: | metal-organic chemical vapor deposition GaN/InGaN multi-quantum wells group III-V semiconductor wide spectral white light |
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