| Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer |
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| 引用本文： | 王建霞,汪连山,杨少延,李辉杰,赵桂娟,张恒,魏鸿源,焦春美,朱勤生,王占国.Effects of V/Ⅲ ratio on a-plane GaN epilayers with an InGaN interlayer[J].中国物理 B,2014,23(2):26801-026801. |
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| 作者姓名： | 王建霞 汪连山 杨少延 李辉杰 赵桂娟 张恒 魏鸿源 焦春美 朱勤生 王占国 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos.91233111,61274041,11275228,61006004,and 61076001);the Special Funds for Major State Basic Research Project (973 Program) of China (Grant No.2012CB619305);the 863 High Technology R&;D Program of China (Grant No.2011AA03A101);the Special Fund for LED Industrial Development of Guangdong Province of China (Grant No.2012A080302003) |
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| 摘 要： | The effects of V/Ⅲgrowth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated.The surface morphology,crystalline quality,strain states,and density of basal stacking faults were found to depend heavily upon the V/Ⅲratio.With decreasing V/Ⅲratio,the surface morphology and crystal quality first improved and then deteriorated,and the density of the basal-plane stacking faults also first decreased and then increased.The optimal V/Ⅲratio growth condition for the best surface morphology and crystalline quality and the smallest basalplane stacking fault density of a-GaN films are found.We also found that the formation of basal-plane stacking faults is an effective way to release strain.
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| 关 键 词： | V/Ⅲ ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition |
| 收稿时间： | 2013-07-18 |
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