The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures |
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| Authors: | Xu Zhi-Hao Zhang Jin-Cheng Zhang Zhong-Fen Zhu Qing-Wei Duan Huan-Tao and Hao Yue |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | AlGaN/GaN heterostructures on vicinal sapphire
substrates and just-oriented sapphire substrates (0001) are grown by
the metalorganic chemical vapor deposition method. Samples are studied
by high-resolution x-ray diffraction, atomic force microscopy,
capacitance--voltage measurement and the Van der Pauw Hall-effect
technique. The investigation reveals that better crystal quality and
surface morphology of the sample are obtained on the vicinal substrate.
Furthermore, the electrical properties are also improved when the sample
is grown on the vicinal substrate. This is due to the fact that the
use of vicinal substrate can promote the step-flow mode of
crystal growth, so many macro-steps are formed during crystal
growth, which causes a reduction of threading dislocations in the
crystal and an improvement in the electrical properties of the
AlGaN/GaN heterostructure. |
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| Keywords: | GaN AlGaN/GaN heterostructures vicinal substrate |
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