Potts-Ising model for simulation of polarization switching in polycrystalline ferroelectrics |
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| Authors: | Zhang Yan-Fei Wang Chun-Lei Zhao Ming-Lei Li Ji-Chao and Zhang Rui-Zhi |
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| Affiliation: | School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | This paper proposes a scheme based on the Potts and Ising models for
simulating polarization switching of polycrystalline ferroelectrics
using the Monte Carlo method. The polycrystalline texture with
different average grain size is produced from the Potts model. Then
Ising model is implemented in the polycrystalline texture to produce
the domain pattern and hysteresis loop. The domain patterns and
hysteresis loops have been obtained for polycrystalline texture with
different average grain size. From the results of domain pattern
evolution process under an applied electric field using this scheme,
an extended domain, which covers more than one grain with
polarization aligned roughly in the same direction, has been
observed during the polarization reversal. This scheme can well
reproduce the basic properties of polycrystalline ferroelectrics and
is a valuable tool for exploring the physical properties of
polycrystalline ferroelectrics. |
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| Keywords: | grain growth ferroelectric
properties Potts--Ising model |
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