The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy |
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| Authors: | Xing Hai-Ying Niu Ping-Juan and Xie Yu-Xin |
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| Affiliation: | [1]School of Electronics and Information Engineering Tianjin Polytechnic University, Tianjin 300387, China [2]Engineering Research Center of High Power Solid State Lighting Application System, Tianjin 300387, China [3]School of Electrical Engineering ＆ Automation Tianjin Polytechnic University, Tianjin 300387, China |
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| Abstract: | An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E2 (high) mode, i.e., ILVM /IE2 (high) , increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed. |
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| Keywords: | diluted magnetic semiconductor metalorganic chemical vapour deposition Ram~n scat-tering |
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