Finite size effect on the Raman frequency of phonons in nano-semiconductors |
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| Authors: | Xia Lei Zhong Kai Song Yang Lu Xin Xu Lii-Shun Yan Yan Li Hong-Dong Yuan Fang-Li Jiang Jian-Zhong Yu Da-Peng and Zhang Shu-Lin |
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| Affiliation: | a) Scbool of Physics, Peking University, Beijing 100871, China b) Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100080, China c) International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Mterials, and State Key Laboratory of Silicon Materials g Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range Fr¨ohlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors. |
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| Keywords: | Raman spectral finite size ef[ect nano-semiconductor |
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