Understanding of impact of carbon doping on background carrier conduction in GaN |
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| Affiliation: | 1.School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;2.State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China |
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| Abstract: | The impact of carbon doping on the background carrier conduction in GaN has been investigated. It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expected. Moreover, from the fitting of the temperature-dependent carrier concentration and mobility, it is observed that high nitrogen-vacancy (VN) dominates the background carrier at room temperature which consequently results in n-type conduction. The doping agent (carbon atom) occupies the nitrogen site of GaN and forms CN deep acceptor as revealed from photoluminescence. Besides, a relatively low hole concentration is ionized at room temperature which was insufficient for the compensation of n-type background carriers. Therefore, we concluded that this background carrier concentration can be suppressed by carbon doping, which substitutes the N site of GaN and finally decreases the VN. |
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| Keywords: | electrical properties and parameters semiconductor materials chemical vapor deposition electronic transport |
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