| Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica |
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| 引用本文： | 尹锡波,沈逸凡,徐超凡,贺靖,李俊烨,姬海宁,王建伟,李含冬,朱小红,牛晓滨,王志明.Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica[J].中国物理 B,2021(1). |
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| 作者姓名： | 尹锡波 沈逸凡 徐超凡 贺靖 李俊烨 姬海宁 王建伟 李含冬 朱小红 牛晓滨 王志明 |
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| 作者单位： | School of Materials and Energy;College of Materials Science and Engineering;Institute of Fundamental and Frontier Sciences |
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| 基金项目： | Project supported by the National Key R&D Program of China(Grant Nos.2018YFA0306102 and 2018YFA0306703);the National Natural Science Foundation of China(Grant No.61474014);the Sichuan Science and Technology Program,China(Grant No.2019YJ0202);the University Program for Elaborate Courses of Postgraduates。 |
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| 摘 要： | The growth of γ-In2Se3 thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In2Se3 is achieved at a relatively low growth temperature. An ultrathin β-In2Se3 buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In2Se3 at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In2Se3 thin films.
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| 关 键 词： | γ-In2Se3 molecular beam epitaxy optoelectronic response |
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