The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs |
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| Authors: | Li Jin Liu Hong-Xia Li Bin Cao Lei Yuan Bo |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1 - XGeX layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs. |
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| Keywords: | silicon-germanium-on-insulator MOSFETs strained Si short channel effects the drain-induced barrier-lowering |
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