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Radiation induced inter-device leakage degradation
作者姓名:胡志远  刘张李  邵华  张正选  宁冰旭  陈明  毕大炜  邹世昌
作者单位:1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;;2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China
摘    要:The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.

关 键 词:设备泄漏  辐射诱发  计算机辅助设计技术  NMOS晶体管  退化  电离总剂量  纳米晶体管  发电技术
收稿时间:2010-11-17

Radiation induced inter-device leakage degradation
HU Zhi-Yuan , LIU Zhang-Li , SHAO Hua ZHANG Zheng-Xuan NING Bing-Xu , CHEN Ming , BI Da-Wei ZOU Shi-Chang.Radiation induced inter-device leakage degradation[J].High Energy Physics and Nuclear Physics,2011,35(8):769-773.
Authors:HU Zhi-Yuan    LIU Zhang-Li  SHAO Hua ZHANG Zheng-Xuan NING Bing-Xu  CHEN Ming  BI Da-Wei ZOU Shi-Chang
Affiliation:HU Zhi-Yuan 1,2,1) LIU Zhang-Li 1,2 SHAO Hua 1 ZHANG Zheng-Xuan 1 NING Bing-Xu 1,2 CHEN Ming 1,2 BI Da-Wei 1 ZOU Shi-Chang 1 1 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China 2 Graduate University of Chinese Academy of Sciences,Beijing 100049,China
Abstract:The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide.The overall radiation response of these structures is determined by the trapped charge in the oxide.The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work,which demonstrates that the wor...
Keywords:total ionizing dose  shallow trench isolation  PFD device  2-D simulation  
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