| 聚对二甲苯薄膜的制备及其在有机电致发光二极管中的应用研究 |
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| 引用本文： | 胡永茂,李汝恒,何鋆,张学清,李茂琼,朱艳.聚对二甲苯薄膜的制备及其在有机电致发光二极管中的应用研究[J].应用光学,2014,35(4):663-669. |
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| 作者姓名： | 胡永茂 李汝恒 何鋆 张学清 李茂琼 朱艳 |
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| 作者单位： | 1.大理学院 工程学院,云南 大理 671003; |
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| 基金项目： | 大理学院博士科研启动费项目; 国家自然科学基金(21104028) |
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| 摘 要： | 使用自制的分子束源制备了聚对二甲苯（Parylene N，PPXN）薄膜。通过对该分子束源的设计和不断优化，PPXN薄膜可以在室温、10-3 Pa的较低反应压强下以0.01 nm/s~0.02 nm/s的速率沉积聚合。用红外透射光谱和原子力显微镜测量了PPXN薄膜的成分和表面形貌。结果表明，所制备的薄膜成分为PPXN，薄膜呈波浪状、无尖刺的表面形貌。准确控制的PPXN薄膜在有机电致发光二极管中用作缓冲层，对载流子的注入和传输进行调控，有效地改善了器件内部的载流子平衡。最优化结构的器件较未插入PPXN缓冲层的器件，电流效率提高80%以上。
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| 关 键 词： | 聚对二甲苯 分子束源 缓冲层 有机电致发光二极管 电流效率 |
| 收稿时间： | 2014/2/13 |
Preparation of Parylene-N ultrathin films and their applications in organic light emitting diodes |
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| Hu Yong-mao,Li Ru-heng,He Yun,Zhang Xue-qing,Li Mao-qiong,Zhu Yan.Preparation of Parylene-N ultrathin films and their applications in organic light emitting diodes[J].Journal of Applied Optics,2014,35(4):663-669. |
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| Authors: | Hu Yong-mao Li Ru-heng He Yun Zhang Xue-qing Li Mao-qiong Zhu Yan |
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| Affiliation: | 1.School of Engineering,Dali University,Dali 671003,China;2.State Key Laboratoryof Surface Physics,Fudan University,Shanghai 200433,China;3.Faculty of Materials Scienceand Engineering,Kunming University of Science and Technology,Kunming 650093,China |
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| Abstract: | Ultrathin poly-p-xylylene (PPXN) films were prepared by using a home-made Knudsen cell (KC). By special design and optimization of the KC, the growth rate was well controlled in the range of 0.01nm/s -0.02 nm/s at room temperature in a relatively lower reaction pressure of 10-3 Pa. The PPXN films were identified by infrared (IR) spectra. The morphology of PPXN films were measured by atomic force microscope (AFM). It was resulted that the PPXN surface showed a spike-free undulated morphology. The well controlled PPXN thin films were used as buffers in organic light emitting diodes to control carrier injection and transport, and improvements of more than 80% in device current efficiency were achieved. |
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| Keywords: | Parylene-N Knudsen cell buffer layer organic light emitting devices current efficiency |
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