首页 | 官方网站   微博 | 高级检索  
     


Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization
Authors:Mel F Hainey Jr  Zakaria Y Al Balushi  Ke Wang  Nathan C Martin  Anushka Bansal  Mikhail Chubarov  Joan M Redwing
Affiliation:1. Department of Materials Science and Engineering and Materials Research Institute Penn State University, University Park, PA, USA;2. Materials Characterization Laboratory Materials Research Institute Penn State University, University Park, PA, USA
Abstract:
Keywords:aluminum‐induced crystallization  GaN  glass  heteroepitaxial growth  metalorganic chemical vapor deposition  silicon
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号