Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon |
| |
| Authors: | Phillip Hamer Brett Hallam Malcolm Abbott Stuart Wenham |
| |
| Affiliation: | School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, NSW, Australia |
| |
| Abstract: | This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 1017 photons/cm2/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 1019 photons/cm2/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
| |
| Keywords: | boron light induced degradation defects crystals silicon |
|
|
