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磁性隧道结Ni80Fe20/Al2O3/Co的研究
引用本文:杜 军,陈 景,吴小山,潘明虎,龙建国,张 维,鹿 牧,翟宏如,胡 安.磁性隧道结Ni80Fe20/Al2O3/Co的研究[J].物理学报,1999,48(13):236-243.
作者姓名:杜 军  陈 景  吴小山  潘明虎  龙建国  张 维  鹿 牧  翟宏如  胡 安
作者单位:(1)南京大学物理系,固体微结构物理国家重点实验室,南京 210093; (2)南京大学现代分析中心,南京 210093
基金项目:国家自然科学基金重大项目(批准号:19890310)和国家高等学校博士学科点专项科研基金(批准号:96028414)资助的课题.
摘    要:用等离子体氧化形成中间绝缘层的方法可重复制备出具有隧道磁电阻(TMR)效应的Ni80Fe20/Al2O3/Co磁性隧道结.光透射谱等实验结果表明等离子体氧化能可控制地制备较致密的Al2O3绝缘层.样品的TMR比值在室温下最高可达6.0%,反转场可低于800A/m,相应的平台宽度约为2400A/m.结电阻Rj的变化范围从百欧到几百千欧,并且TMR比值随零磁场结偏压增大单调减小. 关键词

收稿时间:7/6/1999 12:00:00 AM

Study on Ni80Fe20/Al2O3/Co Magnetic Tunnel Junctions
Du Jun,Chen Jing,Wu Xiao-Shan,Pan Ming-Hu,Long Jian-Guo,Zhang Wei,Lu Mu,Zhai Hong-Ru and Hu An.Study on Ni80Fe20/Al2O3/Co Magnetic Tunnel Junctions[J].Acta Physica Sinica,1999,48(13):236-243.
Authors:Du Jun  Chen Jing  Wu Xiao-Shan  Pan Ming-Hu  Long Jian-Guo  Zhang Wei  Lu Mu  Zhai Hong-Ru and Hu An
Abstract:With plasma oxidization to create an insulating layer of Al2O3, we have repeatedly fabricated some Ni80Fe20/Al2O3/Co magnetic tunnel junctions (MTJ), which show obvious tunneling magnetoresistance (TMR) effect. The insulating layer is well formed by the oxidization procedure, which is verified by optical spectra and other measurement results. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800A/m and the relative step width is about 2400A/m. The junction resistance Rj changes from hundreds of ohms to hundreds of kilohms and TMR ratio decreases monotonously with the increase of applied junction voltage bias (under zero magnetic field).
Keywords:
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