首页 | 官方网站   微博 | 高级检索  
     

顶部反射镜对GaN基共振腔发光二极管性能的影响研究
引用本文:赵淑钰,徐滨滨,赵振宇,吕雪芹.顶部反射镜对GaN基共振腔发光二极管性能的影响研究[J].物理学报,2022(4):235-242.
作者姓名:赵淑钰  徐滨滨  赵振宇  吕雪芹
作者单位:厦门大学萨本栋微米纳米科学技术研究院
基金项目:国家自然科学基金(批准号:61574119);福建省自然科学基金(批准号:2021J01048,2017J01120)资助的课题.
摘    要:本文在Ga N基共振腔发光二极管(RCLED)顶部设计制备了高反膜结构分布式布拉格反射镜(DBR)和滤波器结构DBR,对比分析了两种反射镜的反射率曲线特征以及对应的RCLED器件的光输出纵模模式、光谱线宽和输出光强等性能差异,详细研究了顶部反射镜的光反射特性对RCLED器件输出光谱性能的影响机理.研究结果表明,顶部反射镜是RCLED的重要组成部分,其反射率曲线特征决定器件的光输出性能.常规高反膜结构DBR顶部反射镜的反射率曲线具有较宽的高反射带,将其作为顶部反射镜可有效压窄RCLED发光纵模线宽,但是发光光谱仍呈现多纵模光输出特征.滤波器结构DBR顶部反射镜的反射率曲线在中心波长处具有较窄的透光凹带,利用透光凹带对输出光的调制作用,器件可实现单纵模光输出,在光通信、光纤传感等领域展示了广阔的应用前景.通过进一步设计RCLED顶部反射镜结构,可以改变其反射率曲线特性,进而优化RCLED器件的输出光谱特性,以满足器件在多个领域的应用需求.

关 键 词:GaN基RCLED  高反膜结构DBR  滤波器结构DBR  单纵模发光

Influence of top mirror on performance of GaN-based resonant cavity light-emitting diode
Affiliation:(Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361005,China)
Abstract:In this paper,two kinds of distributed Bragg reflectors(DBRs)with high-reflective-film structure and filter structure are designed and evaporated on the top of GaN-based resonant cavity light emitting diode(RCLED),respectively.Firstly,the reflectivity spectra of the two kinds of DBRs are simulated.Then,the differences in performance including optical longitudinal modes,spectral linewidth,and output light intensity between the two kinds of RCLED devices with different top mirrors,are compared and analyzed.Finally,the influence of the top mirror reflection characteristics on the output spectrum of the RCLED is studied in detail.The results show that the top mirror is an important part of RCLED,and its reflection characteristics determine the optical performance of the device.For the conventional DBR with high-reflective-film structure,its reflectivity spectrum has a wide high-reflection band.Accordingly,the spectral linewidth of the RCLED can be effectively narrowed by using the conventional DBR as the top mirror.However,the spectrum still consists of multi-longitudinal modes.For the DBR with filter structure,its reflectivity spectrum has a narrow high-transmittance band at the central wavelength.Depending on the modulation effect of the high-transmittance band to the output light,single longitudinal mode light emission is realized for the RCLED with the specially designed DBR as the top mirror,which shows a broad application prospect in optical communication and optical fiber sensing.Moreover,the spectral characteristics of the RCLED can be further optimized to meet its application requirements in much more fields,by designing the top mirror structure and changing its reflectivity spectrum characteristics.
Keywords:GaN-based RCLED  DBR with high-reflective-film structure  DBR with filter structure  single-longitudinal-mode light emission
本文献已被 维普 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号