| 铝基薄膜忆阻器作为感觉神经系统的习惯化特性 |
| |
| 引用本文： | 朱玮,郭恬恬,刘兰,周荣荣.铝基薄膜忆阻器作为感觉神经系统的习惯化特性[J].物理学报,2021(6):291-298. |
| |
| 作者姓名： | 朱玮 郭恬恬 刘兰 周荣荣 |
| |
| 作者单位： | 长安大学电子与控制工程学院 |
| |
| 基金项目： | 国家自然科学基金青年科学基金(批准号:61704010);陕西省自然科学基金(批准号:2020JQ-341)资助的课题~~ |
| |
| 摘 要： | 感觉神经系统可在外界刺激与生物体反应之间建立联系.感觉神经系统中的最小单位神经元可直接将外界刺激传递至中枢神经,再由中枢神经通过控制和调节生物体对外界刺激作出反应.神经突触连接了相邻神经元进行脉冲信息传递功能.习惯化是神经突触在信息传递中过滤外界无关信息时的一个基本特性,可以让感觉神经系统更快速地适应外界环境变化.忆阻器模拟神经突触功能在近年获得进展,然而针对以忆阻器为基础的具有习惯化特性的神经突触以及完整神经系统的研究相对匮乏.本文利用磁控溅射技术制备了厚度约为40 nm且含铝纳米颗粒的氮化铝薄膜忆阻器,并发现这种结构忆阻器对于重复的外界刺激有明显的习惯化行为,该行为与感觉神经系统的习惯化特性极为相似.若将这种具有习惯化的神经突触与感觉神经元串联,可形成LIF(leaky integrate-and-fire)生物模型模拟完整的神经系统行为,也为忆阻器在第三代神经网络(脉冲神经网络)中的应用提供理论参考.
|
| 关 键 词： | 铝基薄膜忆阻器 习惯化 感觉神经系统 |
Al-based memristor applied to habituation sensory nervous system |
| |
| Zhu Wei,Guo Tian-Tian,Liu Lan,Zhou Rong-Rong.Al-based memristor applied to habituation sensory nervous system[J].Acta Physica Sinica,2021(6):291-298. |
| |
| Authors: | Zhu Wei Guo Tian-Tian Liu Lan Zhou Rong-Rong |
| |
| Affiliation: | (School of Electronics and Control Engineering,Chang’an University,Xi’an 710064,China) |
| |
| Abstract: | Sensory nervous system(SNS) can build the connections between organism and outside environment. Both of synapse and neuron are cornerstones of human biological system, which can transmit information to human brain and receive the feedback from central nervous system. Finally, the corresponding responses to the external information are performed. However, the information from outside environment should be received by SNS all the time. It is important for organism to distinguish between the stimuli that required attention and those that are irrelevant and no need to response. Habituation is one of fundamental properties of SNS to form such discrimination. It plays an important role for organism to adapt the environment and filter out irrelevantly repetitive information. In this study, an nc-Al/AlN structured based memristor with a thickness of 40 nm is produced by the sputtering method. The top and bottom electrode are of Ag and Al respectively, forming a sandwiched structure device. Habituation is found in the nc-Al/AlN thin film based memristor which has been rarely reported before. Both of current-voltage(Ⅰ-Ⅴ) and pulse voltage measurement are executed on this device at room temperature. In the Ⅰ-Ⅴ measurement, the memristor shows unipolar switching properties which may be caused by conductive filament connecting or breaking. In the voltage pulse measurement, pulse interval is an important factor to affect memristor conduction. If the pulse interval is quite large, that is, the pulse frequency is low, the memristor will get maximized conduction very slow or in infinity time. If choosing an appropriate pulse voltage and interval value, the habituation will be observed after several stimulus pulses. The larger pulse interval needs more pulse numbers to cause memristor to be habituated, but which results in higher device conduction finally. A habituation memristor can act as synapse and connect with neuron to build the whole leaky integrate-and-fire(LIF) model which is quite often used in circuit design to mimic a real organism neuron behavior. In this model, neuron could be fired only when it gets enough stimuli from previous neuron. If the stimulus pulse frequency is low, there is observed no firing phenomenon in this case. In this study, the input signal of LIF model is a continuous voltage pulse with an amplitude of 1.2 V and interval of 5 ms. Such an input signal will be transmitted by habituation memristor to a neuron electronic element. The output signal is the pulse generated by neuron when it is fired. According to the results, the frequency of output signal is smaller than input information which complies with the basic characteristics of habituation. It is supposed that organisms should not response to this repetitive pulse any more and it will make neuron have more capabilities to handle following information. |
| |
| Keywords: | Al-based thin film memristor habituation sensor nervous system |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
|
