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CaCu3Ti4O12陶瓷的介电特性与弛豫机理
引用本文:成鹏飞,王辉,李盛涛.CaCu3Ti4O12陶瓷的介电特性与弛豫机理[J].物理学报,2013,62(5):57701-057701.
作者姓名:成鹏飞  王辉  李盛涛
作者单位:1. 西安工程大学理学院, 西安 710048; 2. 西安交通大学电力设备电气绝缘国家重点实验室, 西安 710049
基金项目:国家自然科学基金(批准号: 51277138, 50972118)、陕西省教育厅科研专项(批准号: 12JK0434) 和西安工程大学博士科研启动基金(批准号: BS0814) 资助的课题.
摘    要:本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu3Ti4O12陶瓷的介电特性, 分析了CaCu3Ti4O12陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu3Ti4O12陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词: 3Ti4O12')" href="#">CaCu3Ti4O12 介电弛豫 Schottky势垒 点缺陷

关 键 词:CaCu3Ti4O12  介电弛豫  Schottky势垒  点缺陷
收稿时间:2012-07-07

Dielectric property and relaxation mechanism of CaCu3Ti4O12 ceramic
Cheng Peng-Fei,Wang Hui,Li Sheng-Tao.Dielectric property and relaxation mechanism of CaCu3Ti4O12 ceramic[J].Acta Physica Sinica,2013,62(5):57701-057701.
Authors:Cheng Peng-Fei  Wang Hui  Li Sheng-Tao
Affiliation:1. School of Science, Xi'an Polytechnic University, Xi'an 710048, China;2. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China
Abstract:In this paper, the dielectric property of CaCu3Ti4O12 ceramic is measured by Novocontrol wide band dielectric spectrometer in a temperature range of -100-100 ℃ and frequency range of 0.1 Hz-10 MHz, and the corresponding dielectric relaxation mechanism is discussed. Firstly, on the basis of quantitative analysis of macroscopic shell-core structure, the possibility of colossal dielectric constant (CDC) originating from the surface insulated layer effect is rejected. Secondly, after the analysis of the nature of classical Maxwell-Wagner sandwich polarization and its activation energy, classical Maxwell-Wagner mechanism is also abandoned. Finally, a new model of trapped electron relaxation at the boundary of Schottky barrier is proposed. The new mechanism correctly reflects the essential connection between intrinsic point defects, conductivity and dielectric constant of CaCu3Ti4O12material.
Keywords:CaCu3Ti4O12  dielectric relaxation  schottky barrier  point defects
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