| 高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究 |
| |
| 引用本文： | 田苗苗,李春杰,贺小光,郭峰,范翊,王宁.高功函数的钛酸镧掺杂氧化铟透明导电薄膜的制备与光电特性研究[J].发光学报,2012,33(10):1055-1059. |
| |
| 作者姓名： | 田苗苗 李春杰 贺小光 郭峰 范翊 王宁 |
| |
| 作者单位： | 长春师范学院物理学院;中国科学院长春应用化学研究所高分子物理与化学国家重点实验室;发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所;中国科学院长春应用化学研究所高分子复合材料工程实验室 |
| |
| 基金项目： | 国家自然科学基金(21104077);吉林省教育厅“十二五”科学技术研究项目(高效率有机太阳能电池研究);长春师范学院自然科学基金(2010第009号)资助项目 |
| |
| 摘 要： | 制备了一种新型的具有高功函数的掺钛酸镧(LaTiO3)的氧化铟(ILTO)三元透明导电氧化物薄膜,并研究了其光电特性。EDX能谱测试结果证实了样品中In、La及Ti的存在,薄膜的掺杂具有良好的均匀性及一致性。由原子力显微镜测试可知,在一个5μm×5μm的扫描区域内,样品的表面粗糙度(RMS)较小,为1 nm量级。ILTO薄膜在可见光区域的平均透过率超过了85%,其功函数接近于金的功函数(5.2 eV左右),远高于目前商业化的ITO的功函数(4.5～4.7 eV)。由于导电薄膜的功函数在光电器件中对异质结界面的势垒高度有着直接影响,较高的功函数可以提高载流子的注入及抽取能力,因此采用ILTO作为光电器件的阳极将有望改善器件的性能。
|
| 关 键 词： | 功函数 掺杂 透明导电薄膜 光致发光 |
| 收稿时间： | 2012/8/7 |
Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films |
| |
| TIAN Miao-miao,LI Chun-jie,HE Xiao-guang,GUO Feng,FAN Yi,WANG Ning.Preparation and Characteristics of High Work-function and Ultraviolet-luminescence Lanthanum Titanate-doped Indium Oxide Thin Films[J].Chinese Journal of Luminescence,2012,33(10):1055-1059. |
| |
| Authors: | TIAN Miao-miao LI Chun-jie HE Xiao-guang GUO Feng FAN Yi WANG Ning |
| |
| Affiliation: | 1.College of Physics,Changchun Normal University,Changchun 130022,China; 2.State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry, Chinese Academy of Sciences,Changchun 130022,China; 3.State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China; 4.Polymer Composites Engineering Laboratory,Changchun Institute of Applied Chemistry, Chinese Academy of Sciences,Changchun 130022,China) |
| |
| Abstract: | A novel high work-function(WF) transparent conducting oxides,lanthanum titanate(LaTiO3)-doped indium oxide(ILTO),with notable electrical and optical features,synthesized by a double electron beam evaporation associated with End-Hall ion assisted deposited technology is introduced.Its room-temperature ultraviolet photoluminescence(PL) with a peak at around 386 nm are determined.A high WF near 5.20 eV is determined for the as-deposited ILTO samples.As far as we know,this is the first report on PL emission at room temperature as well as high-WF properties in a multi-doping transparent oxide semiconductor.The effects of high WF afford more opportunities to develop and optimize the performance of organic photoelectric devices,and facilitate the fabrication process of devices. |
| |
| Keywords: | work function doped transparent conducting oxides photoluminescence |
| 本文献已被 CNKI 等数据库收录！ |
|
