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半导体激光器腔面增透膜AIN薄膜的制备
引用本文:周路,王云华,贾宝山,白端元,张斯钰,乔忠良,高欣,薄报学.半导体激光器腔面增透膜AIN薄膜的制备[J].发光学报,2011,32(12):1292-1296.
作者姓名:周路  王云华  贾宝山  白端元  张斯钰  乔忠良  高欣  薄报学
作者单位:长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
摘    要:提出了一种新的半导体激光器增透膜——A1N膜,并用matlab软件模拟分析了不同腔面反射率对激光器输出功率的影响,得到激光器最大输出功率时前后腔面的反射率的最佳值.采用反应磁控溅射技术,利用高纯铝靶(99.999%)和N2+ Ar的混合气体在K9玻璃基片上沉积了AlN薄膜.利用Filmetrics系统对薄膜进行光学性能...

关 键 词:增透膜  折射率  溅射  灾变性光学损伤
收稿时间:2011-08-03

Deposition of AlN Film for AR Coating of Semiconductor Lasers
ZHOU Lu,WANG Yun-hua,JIA Bao-shan,BAI Duan-yuan,ZHANG Si-yu,QIAO Zhong-liang,GAO Xin,BO Bao-xue.Deposition of AlN Film for AR Coating of Semiconductor Lasers[J].Chinese Journal of Luminescence,2011,32(12):1292-1296.
Authors:ZHOU Lu  WANG Yun-hua  JIA Bao-shan  BAI Duan-yuan  ZHANG Si-yu  QIAO Zhong-liang  GAO Xin  BO Bao-xue
Affiliation:State Key Laboratory of High Power Semiconductor Lasers, Changchun Universty of Science and Technology,Changchun 130022,China
Abstract:The relationship between output power and reflectance of the cavity surface was simulated. Simulation results showed that, when the reflectance of cavity surface coatings took the optimum value, the output power of the semiconductor lasers diode reached the maximum. AlN film were deposited on K9 glass substrates by magnetron sputtering using high-purity Al target and N2+Ar. The influence of sputtering conditions, including working pressure, nitrogen concentration, sputtering power on its deposition rate and optical properties has been studied. The optimized AlN coating was used in semiconductor lasers, we found that the COD threshold and the output power have been greatly improved.
Keywords:AR film  refractivity  sputtering  COD
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