| Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor |
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| 作者姓名： | 张有润 张波 李肇基 邓小川 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and IntegratedDevices, University of Electronic Science and Technology of China,Chengdu 610054, China |
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| 摘 要： | This paper studies two-dimensional analysis of the surfacestate effect on current gain for a 4H--SiC bipolar junctiontransistor (BJT). Simulation results indicate the mechanism ofcurrent gain degradation, which is surface Fermi level pinningleading to a strong downward bending of the energy bands to form thechannel of surface electron recombination current. The experimentalresults are well-matched with the simulation, which is modeled byexponential distributions of the interface state density replacingthe single interface state trap. Furthermore, the simulation revealsthat the oxide quality of the base emitter junction interface is veryimportant for 4H--SiC BJT performance.
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| 收稿时间： | 2009-09-18 |
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