Investigations on AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes With Si‐Doped Quantum Barriers of Different Doping Concentrations |
| |
| Authors: | Kangkai Tian Qian Chen Chunshuang Chu Mengqian Fang Luping Li Yonghui Zhang Wengang Bi Changqing Chen Zi‐Hui Zhang Jiangnan Dai |
| |
| Affiliation: | 1. Institute of Micro‐Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Beichen District, Tianjin 300401, P. R. China;2. Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, P. R. China;3. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, P. R. China |
| |
| Abstract: | In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for 0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells. |
| |
| Keywords: | deep‐UV LED hole injection multiple quantum wells polarization screening Si‐doped quantum barrier |
|
|
