Optical emission spectroscopy study on depositionprocess of microcrystalline silicon |
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| Authors: | Wu Zhi-Meng Lei Qing-Song Geng Xin-Hu Zhao Ying Sun Jian and Xi Jian-Ping |
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| Affiliation: | Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, China; Institute of Optoelectronics, Nankai University, Tianjin 300071, China |
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| Abstract: | This paper reports that the optical emission spectroscopy (OES) is
used to monitor the plasma during the deposition process of
hydrogenated microcrystalline silicon films in a very high frequency
plasma enhanced chemical vapour deposition system. The OES
intensities (SiH\sj{*}, H$_\al^*$ and H$_\be^*$) are investigated by
varying the deposition parameters. The result shows that the
discharge power, silane concentrations and substrate temperature
affect the OES intensities. When the discharge power at silane
concentration of 4\% increases, the OES intensities increase first
and then are constant, the intensities increase with the discharge
power monotonously at silane concentration of 6\%. The SiH\sj{*}
intensity increases with silane concentration, while the intensities
of H$_\al^*$ and H$_\be^*$ increase first and then decrease. When
the substrate temperature increases, the SiH\sj{*} intensity
decreases and the intensities of H$_\al^*$ and H$_\be^*$ are
constant. The correlation between the intensity ratio of $I_{\rm
H_\al^*}$/$I_{{\rm SiH}^*}$ and the crystalline volume fraction
($X_{\rm c}$) of films is confirmed. |
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| Keywords: | microcrystalline silicon VHF-PECVD optical emission spectroscopy |
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