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The fabrication and characterization of 4H SiC power UMOSFETs |
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| Authors: | Song Qing-Wen Zhang Yu-Ming Han Ji-Sheng Philip Tanner Sima Dimitrijev Zhang Yi-Men Tang Xiao-Yan Guo Hui |
| Affiliation: | a School of Technical Physics, Xidian University, Xi'an 710071, China;b Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;c Queensland Micro and Nanotechnology Center, Griffith University, Nathan 4111, Australia;d Griffith School of Engineering, Griffith University, Nathan 4111, Australia |
| Abstract: | The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1-μm channel length. The measured on-state source-drain current density is 65.4 A/cm2 at Vg=40 V and VDS=15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 mΩ·cm2 at Vg=40 V and a blocking voltage (BV) is 880 V (IDS=100 μA@880V) at Vg=0 V. |
| Keywords: | UMOSFETs 4H-SiC specific on-resistance blocking voltage |
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