| Numerical modelling of anisotropy in 4H－SiC MESFET‘s |
| |
| 引用本文： | 吕红亮,张义门,张玉明. Numerical modelling of anisotropy in 4H－SiC MESFET‘s[J]. 中国物理, 2003, 12(8): 895-898. DOI: 10.1088/1009-1963/12/8/314 |
| |
| 作者姓名： | 吕红亮 张义门 张玉明 |
| |
| 作者单位： | Microelectronics Institute, Xidian University, Xi'an 710071, China |
| |
| 摘 要： | A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.
|
| 关 键 词： | 4H-SiC MESFET 各向异性 数学模型 四氢碳化硅 蒙特卡洛模拟 硅相 |
| 收稿时间： | 2002-10-23 |
Numerical modelling of anisotropy in 4H-SiC MESFET's |
| |
| Lü Hong-Liang,Zhang Yi-Men,Zhang Yu-Ming. Numerical modelling of anisotropy in 4H-SiC MESFET's[J]. Chinese Physics, 2003, 12(8): 895-898. DOI: 10.1088/1009-1963/12/8/314 |
| |
| Authors: | Lü Hong-Liang Zhang Yi-Men Zhang Yu-Ming |
| |
| Affiliation: | Microelectronics Institute, Xidian University, Xi'an 710071, China |
| |
| Abstract: | A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances. |
| |
| Keywords: | 4H-SiC MESFET anisotropy numerical model |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
