| 自发形核生长的AlN单晶湿法腐蚀研究 |
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| 引用本文： | 刘理想,曹凯,汪佳,任忠鸣,邓康,吴亮.自发形核生长的AlN单晶湿法腐蚀研究[J].人工晶体学报,2017,46(7):1239-1243. |
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| 作者姓名： | 刘理想 曹凯 汪佳 任忠鸣 邓康 吴亮 |
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| 作者单位： | 省部共建高品质特殊钢冶金与制备国家重点实验室,上海市钢铁冶金新技术开发应用重点实验室,上海大学材料科学与工程学院,上海 200072 |
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| 基金项目： | 国家自然科学基金(51401116;51404148)，上海市科委基金(13DZ1108200 |
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| 摘 要： | 采用湿法腐蚀工艺,使用熔融态KOH和NaOH作为腐蚀剂,对一种物理气相传输(PVT)自发形核新工艺在2100~2250 ℃条件下生长的AlN单晶进行了腐蚀实验.通过实验及扫描电子显微镜(SEM)结果分析,得到了典型的AlN单晶c面、r系列面及m面最佳的腐蚀工艺参数及腐蚀形貌.另外,基于腐蚀形貌分析,发现了采用该自发形核新工艺生长的AlN晶体某些独特习性并计算出AlN单晶腐蚀坑密度(EPD).
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| 关 键 词： | AlN单晶 自发形核 湿法腐蚀 |
Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation |
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| LIU Li-xiang,CAO Kai,WANG Jia,REN Zhong-ming,DENG Kang,WU Liang.Research on Wet-etching of AlN Single Crystals Grown by Spontaneous Nucleation[J].Journal of Synthetic Crystals,2017,46(7):1239-1243. |
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| Authors: | LIU Li-xiang CAO Kai WANG Jia REN Zhong-ming DENG Kang WU Liang |
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| Abstract: | AlN single crystals prepared by a novel spontaneous physical vapor transport (PVT) growth approach at 2100-2250 ℃ were etched in molten KOH/NaOH eutectic alloy.All samples were investigated by scanning electron microscope (SEM) after wet-etching, optimal parameters and morphologies for c-plane, r-planes and m-plane of AlN single crystals are obtained.The growth habits and etch pit densities (EPD) of crystals grown by proposed novel spontaneous approach are also revealed. |
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| Keywords: | AlN single crystal spontaneous nucleation wet-etching |
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