| 二氧化钒/泡沫镍—体化电极材料的制备及其电化学特性研究 |
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| 引用本文： | 李坤振,袁江涛,刘中飞,熊狂炜,金绍维,王佩红. 二氧化钒/泡沫镍—体化电极材料的制备及其电化学特性研究[J]. 人工晶体学报, 2017, 46(2): 291-296 |
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| 作者姓名： | 李坤振 袁江涛 刘中飞 熊狂炜 金绍维 王佩红 |
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| 作者单位： | 安徽大学物理与材料科学学院,合肥,230601;安徽大学物理与材料科学学院,合肥230601;安徽省信息材料与器件重点实验室,合肥230601 |
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| 基金项目： | 国家自然科学基金(61671017) |
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| 摘 要： | 采用五氧化二钒,草酸和泡沫镍作为原料,经一步水热反应法,成功制备出二氧化钒/泡沫镍一体化电极.X-射线衍射仪(XRD)和扫描电子显微镜(SEM)用来表征二氧化钒/泡沫镍电极材料的物相和形貌.结果显示,当草酸浓度为0.1 mol·L-1时,制备的二氧化钒具有纳米片状结构,其厚度为80 ～ 140 nm.电化学结果显示,二氧化钒/泡沫镍一体化电极材料,其比电容高达3.99 F·cm-2(在电流密度为1 mA·cm-2),这是由于生长在泡沫镍上片状二氧化钒具有高的比表面积.经过2000次的循环后,二氧化钒/泡沫镍电极的比电容仅损失9.95;,显示很好的循环稳定性.
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| 关 键 词： | 二氧化钒/泡沫镍 电极材料 比电容, |
Preparation and Electrochemical Characteristics of VO2/Nickel Foam Integrating Electrode Materials |
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| LI Kun-zhen,YUAN Jiang-tao,LIU Zhong-fei,XIONG Kuang-wei,JIN Shao-wei,WANG Pei-hong. Preparation and Electrochemical Characteristics of VO2/Nickel Foam Integrating Electrode Materials[J]. Journal of Synthetic Crystals, 2017, 46(2): 291-296 |
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| Authors: | LI Kun-zhen YUAN Jiang-tao LIU Zhong-fei XIONG Kuang-wei JIN Shao-wei WANG Pei-hong |
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| Abstract: | The VO2/nickel foam integrating electrode materials were successfully prepared by one-pot hydrothermal approach,using V2O5,oxalic acid and nickel foam as raw materials.The structures and morphologies of VO2/nickel foam electrodes were characterized by (XRD) spectrometry and scanning electron microscopy (SEM).The results indicate that the VO2 shows a nanoflake-structure when the concentration of oxalic acid is 0.1 mol · L-1 this nanoflake-structured of VO2 has a thickness ranges of 80-140 nm.The electrochemical results indicate that the VO2/nickel foam electrode with a nanoflake-structured shows a specific capacitance of 3.99 F · cm-2 at a current density of 1 mA · cm-2 It is ascribed to a high specific surface area of the nanoflake-structured VO2/nickel foam electrode.The nanoflake-structured VO2/nickel foam electrode is recycled for 2000 cycles,only 9.95％ of its specific capacity is lost,exhibits good cycle stability. |
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| Keywords: | VO2/nickel foam electode material specific capacitance |
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