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CuSCN空穴传输层工艺对钙钛矿电池性能的影响
引用本文:赵善真,丁毅,郭升,石标,姚鑫,侯福华,郑翠翠,张德坤,魏长春,王广才,赵颖,张晓丹.CuSCN空穴传输层工艺对钙钛矿电池性能的影响[J].人工晶体学报,2017(5):753-758.
作者姓名:赵善真  丁毅  郭升  石标  姚鑫  侯福华  郑翠翠  张德坤  魏长春  王广才  赵颖  张晓丹
作者单位:南开大学光电子薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室,天津 300071
基金项目:国家自然科学基金(61474065;61504069),天津市重点基金(15JCZDJC31300),江苏省重点项目(BE2014147-3),教育部111引智项目(B16027)
摘    要:采用溶液法制备了硫氰酸亚铜(CuSCN)薄膜,并将其作为空穴传输层制备了平面n-i-p型钙钛矿太阳电池。系统考察了CuSCN薄膜退火温度、旋涂转速对钙钛矿太阳电池性能的影响。研究结果表明,CuSCN薄膜在70℃下退火10 min可以获得较好的电池性能;在此基础上通过调整旋涂转速至2000 r/min,控制CuSCN薄膜厚度约为240nm,电池性能获得了进一步的提升,电池效率可达11.77%。该研究结果表明,CuSCN材料是一种有潜力的、低成本高性能无机空穴传输材料。

关 键 词:CuSCN薄膜  钙钛矿太阳电池  溶液法  空穴传输层

Fabrication of CuSCN Hole Transporting Layer and Its Influences on Perovskite Solar Cells
ZHAO Shan-zhen,DING Yi,GUO Sheng,SHI Biao,YAO Xin,HOU Fu-hua,ZHENG Cui-cui,ZHANG De-kun,WEI Chang-chun,WANG Guang-cai,ZHAO Ying,ZHANG Xiao-dan.Fabrication of CuSCN Hole Transporting Layer and Its Influences on Perovskite Solar Cells[J].Journal of Synthetic Crystals,2017(5):753-758.
Authors:ZHAO Shan-zhen  DING Yi  GUO Sheng  SHI Biao  YAO Xin  HOU Fu-hua  ZHENG Cui-cui  ZHANG De-kun  WEI Chang-chun  WANG Guang-cai  ZHAO Ying  ZHANG Xiao-dan
Abstract:Planar n-i-p type perovskite solar cells were fabricated by using solution processed CuSCN as the hole transporting layer.The influences of CuSCN fabrication conditions such as annealing temperature, spin coating speed on solar cell performances were carefully investigated.The results show that, solar cells exhibits better performance by using CuSCN films annealed at 70 ℃ for 10 min.Furthermore, by controlling the spin coating speed at 2000 r/min, and fixing the CuSCN film thickness around 240 nm, solar cell performance has been improved substantially to 11.77%.Current work indicates that CuSCN has potential to be a cheap and high performance inorganic hole transporting material.
Keywords:CuSCN thin film  perovskite solar cell  solution process  hole transporting layer
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