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化学气相沉积法制备石墨烯晶畴的氧气刻蚀现象研究
引用本文:王彬,李成程,孟婷婷,王桂强.化学气相沉积法制备石墨烯晶畴的氧气刻蚀现象研究[J].人工晶体学报,2017,46(6):1122-1125.
作者姓名:王彬  李成程  孟婷婷  王桂强
作者单位:渤海大学新能源学院,锦州,121013
基金项目:国家自然科学基金(21273137),国家级"大学生创新创业训练计划"项目(201610167080)
摘    要:利用化学气相沉积法在抛光铜衬底上制备出六角形石墨烯晶畴,并对石墨烯晶畴进行氧气刻蚀.刻蚀完成后,利用光学显微镜和扫描电子显微镜观察到石墨烯晶畴表面的褶皱被刻蚀成网络状和短线状形貌的刻蚀条纹,并且刻蚀条纹的密度分布差异较大.通过电子背散射衍射测试证明了铜衬底的晶向与褶皱的形貌和密度分布有密切关系,不同的铜衬底晶向会影响褶皱的形貌和密度分布.通过改变刻蚀时间和刻蚀温度,发现刻蚀温度对石墨烯的氧气刻蚀具有更重要的影响,当刻蚀温度高于250 ℃时,刻蚀速率明显提高.这种氧气刻蚀方法,为观察石墨烯表面褶皱的形态和密度分布提供了一种便捷的途径.

关 键 词:石墨烯  化学气相沉积  褶皱  刻蚀  

Oxidation Etching of Graphene Domains Prepared by Chemical Vapor Deposition
WANG Bin,LI Cheng-cheng,MENG Ting-ting,WANG Gui-qiang.Oxidation Etching of Graphene Domains Prepared by Chemical Vapor Deposition[J].Journal of Synthetic Crystals,2017,46(6):1122-1125.
Authors:WANG Bin  LI Cheng-cheng  MENG Ting-ting  WANG Gui-qiang
Abstract:Hexagonal graphene domains were synthesized on polished Cu substrate by chemical vapor deposition(CVD), and were etched with oxygen.After etching, reticular and short-line trenches were observed on the graphene domains as the result of etching on the wrinkles, and the density of trenches has great difference.The morphology and density of wrinkles were closely associated with the Cu crystal orientation indicated by the electron back-scattered diffraction.A different Cu crystal orientation led to variations in the morphology and density of wrinkles.The etching temperature has greater influence on the oxygen etching of graphene, and the etching rate increased obviously when the etching temperature exceed 250 ℃.The simple oxygen etching technology might be a convenient way to detect the distribution and morphology of wrinkles.
Keywords:graphene  chemical vapor deposition  wrinkle  etching
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