| 西门子反应器中硅棒热电行为数值模拟与分析 |
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| 引用本文： | 周扬民,聂陟枫,谢刚,李亚广,侯彦青.西门子反应器中硅棒热电行为数值模拟与分析[J].人工晶体学报,2017,46(10):1971-1977. |
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| 作者姓名： | 周扬民 聂陟枫 谢刚 李亚广 侯彦青 |
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| 作者单位： | 昆明理工大学复杂有色金属资源清洁利用国家重点实验室,昆明650093;昆明理工大学冶金与能源工程学院,昆明 650093;昆明冶金研究院,昆明650031;昆明理工大学复杂有色金属资源清洁利用国家重点实验室,昆明,650093;昆明理工大学冶金与能源工程学院,昆明 650093;昆明冶金研究院,昆明650031;昆明理工大学复杂有色金属资源清洁利用国家重点实验室,昆明650093;昆明理工大学冶金与能源工程学院,昆明 650093 |
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| 基金项目： | 国家自然科学基金地区项目(21566015)，中国博士后科学基金(2017M613281XB) |
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| 摘 要： | 改良西门子法制备多晶硅过程中,化学气相沉积所需能量全部由电流加热硅棒提供.本文考虑多晶硅还原炉中辐射和对流热量传递形式,耦合频率控制的焦耳电加热方程,建立了12对棒多晶硅还原炉热场-电磁场耦合模型,并通过工业数据验证了其模拟结果的合理性.分析了硅棒半径、交流电频率以及反应器壁发射率对西门子还原炉内、外硅棒内部温度及电流密度分布的影响.结果表明:当硅棒半径增长到所用交流电频率引起的趋肤深度时,交流电趋肤效应开始显著影响硅棒内部温度梯度;交流电频率的增大,硅棒内部温度梯度逐渐减小;反应器壁发射率增加,低频时硅棒内部温差增大,而高频时发射率对硅棒内部温度分布影响不再显著.
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| 关 键 词： | 多晶硅 趋肤效应 热传导 电流密度 |
Numerical Simulation and Analysis of Thermal-Electric Behavior of Silicon Rod in Siemens Reactor |
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| ZHOU Yang-min,NIE Zhi-feng,XIE Gang,LI Ya-guang,HOU Yan-qing.Numerical Simulation and Analysis of Thermal-Electric Behavior of Silicon Rod in Siemens Reactor[J].Journal of Synthetic Crystals,2017,46(10):1971-1977. |
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| Authors: | ZHOU Yang-min NIE Zhi-feng XIE Gang LI Ya-guang HOU Yan-qing |
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| Abstract: | In the production of polysilicon by application of modified Siemens process , all the energy for polysilicon chemical vapor deposition is supplied by the heat generation on silicon rods which are heated up by the passage of current .The coupling model of thermal and electromagnetic field for the silicon rods located in a 24-rod polysilicon reduction furnace was developed by coupling joule heating equation controlled by frequency and heat dissipation ( radiation and convection ) .Furthermore , the results were evaluated to be valid by comparing with industrial data .The influences of rod radius , AC frequency and wall emissivity on temperature and current density profile within rod were studied .The interesting results show that the skin effect begins to appear when the radius of the silicon rods increases to the value of skin depth.High frequency current sources can generate an even temperature profile and a higher deposition radius of rods can be obtained .The temperature difference between the center temperature and surface temperature of rods increases for a low AC frequency with increasing wall emissivity while the temperature difference has a weak influence on the temperature profile at a high AC frequency . |
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| Keywords: | polysilicon skin effect heat conduction current density |
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