Effect of CO on Characteristics of AlGaN/GaN Schottky Diode |
| |
| Authors: | FENG Chun WANG Xiao-Liang YANG Cui-Bai XIAO Hong-Ling ZHANG Ming-Lan JIANG Li-Juan TANG Jian HU Guo-Xin WANG Jun-Xi WANG Zhan-Guo |
| |
| Affiliation: | Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| |
| Abstract: | Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor signal (3mA, in N2; 2mA in air ambient) biased 2V after 1% CO is introduced at 50°C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection. |
| |
| Keywords: | 73.61.Ey 07.07.Df 73.40.Ns |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
|
点击此处可从《中国物理快报》下载免费的PDF全文 |
