| 平面SiC薄膜场致发射的机理研究 |
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| 引用本文： | 李德昌,杨银堂,刘广均,朱长纯.平面SiC薄膜场致发射的机理研究[J].人工晶体学报,2000,29(3):264-268. |
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| 作者姓名： | 李德昌 杨银堂 刘广均 朱长纯 |
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| 作者单位： | 西安交通大学,电信学院真空微电子所,西安710049;西安电子科技大学,微电子所,西安710071;西安理工大学,应用化学系,西安710048 |
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| 基金项目： | 中国科学院资助项目，高等学校博士学科点专项科研项目 |
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| 摘 要： | 碳化硅在场致发射(EE)应用中除了具有金刚石的一般优点之外,还具有易于n型或者p型掺杂的特性.本文用APCVD方法研制了一种SiC薄膜.在FEE测试中发现,其开启场强低达0.3 MV/m.根据电子发射过程的理论分析,得到一种电流随电压指数增加的模式可用于理解场致发射的测试结果.根据这个模型,电子从衬底向薄膜的注入和电子在薄膜中的输运是限制发射的主要因素.由此还可以推测,薄膜中相邻的电子传递中心之间的距离约为0.6 nm.
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| 关 键 词： | SiC薄膜 多晶 场致发射 I～V特性 拟合 |
Mechanism of Field Electron Emission from a Planar SiC Film |
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| LI De-Chang,YANG Yin-Tang,LIU Guang-Jun,ZHU Chang-Chun.Mechanism of Field Electron Emission from a Planar SiC Film[J].Journal of Synthetic Crystals,2000,29(3):264-268. |
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| Authors: | LI De-Chang YANG Yin-Tang LIU Guang-Jun ZHU Chang-Chun |
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| Abstract: | Besides the general advantages as diamond films in FEE, SiC film is able to be n-type doped or p-type doped easily. The SiC films have been developed as cold cathodes by APCVD. It is found in the FEE tests that the onset field strength is as low as 0.3 MV/m. According to the theoretical analysis about the emission procedure an exponential increase model is deduced to understand the FEE results. According to the model, the electron injection from substrate to the film plays an important role in the FEE, and the electron transport in the film is vital for the FEE. So the distance between the two adjacent conductive centers can be estimated of 0.6 nm. |
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| Keywords: | SiC film poly-crystalline field electron emission (FEE) I-V characterization modeling |
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