Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system |
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| Authors: | He Bin Chen Guang-Hu Zhu Xiu-Hong Zhang Wen-Li Ding Yi Ma Zhan-Jie Gao Zhi-Hu Song Xue-Mei and Deng Jin-Xiang |
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| Affiliation: | College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China; School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; College of Applied Science, Beijing University of Technology,Beijing 100022, China |
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| Abstract: | Intrinsic hydrogenated microcrystalline silicon (\muc-Si:H) films have
been prepared by hot-wire-assisted microwave electron-cyclotron-resonance
chemical vapour deposition (HW-MWECR-CVD) under different deposition
conditions. Fourier-transform infrared spectra and Raman spectra were
measured. Optical band gap was determined by Tauc plots, and experiments of
photo-induced degradation were performed. It was observed that hydrogen
dilution plays a more essential role than substrate temperature in
microcrystalline transformation at low temperatures. Crystalline volume
fraction and mean grain size in the films increase with the dilution
ratio (R=H2/(H2+SiH4)).
With the rise of crystallinity in the films, the optical band gap tends to
become narrower while the hydrogen content and photo-induced degradation
decrease dramatically. The samples, were identified as \mu c-Si:H films, by
calculating the optical band gap. It is considered that hydrogen dilution
has an effect on reducing the crystallization activation energy of the
material, which promotes the heterogeneous solid-state phase transition
characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the
needed structure can be prepared by balancing deposition and crystallization
through controlling process parameters. |
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| Keywords: | HW-MWECR-CVD \mu$c-Si:H hydrogen dilution heterogeneous solid-state phase transition |
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