| Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer |
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| 作者姓名： | 祁先进 王寅岗 周广宏 李子全 郭敏 |
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| 作者单位： | College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No.~50671048). |
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| 摘 要： | This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate;the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures.The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature.Increasing the temperature accelerates the decrease of exchange field.The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al.2007 Phys.Rev.B 75 014434],and it is believed that two energy barriers exist in the investigated temperature range.
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| 关 键 词： | thermal relaxation exchange bias energy barrier CoFe/IrMn bilayer |
| 收稿时间： | 5/4/2009 12:00:00 AM |
Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer |
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| Qi Xian-Jin,WangYin-Gang,Zhou Guang-Hong,Li Zi-Quan and Guo Min.Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer[J].Chinese Physics B,2010,19(3):37503-037503. |
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| Authors: | Qi Xian-Jin WangYin-Gang Zhou Guang-Hong Li Zi-Quan and Guo Min |
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| Affiliation: | College of Materials Science and Technology, Nanjing University of
Aeronautics and Astronautics, Nanjing 210016, China |
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| Abstract: | This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer
substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. 2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the
investigated temperature range. |
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| Keywords: | thermal relaxation exchange bias energy barrier CoFe/IrMn bilayer |
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