High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact |
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Authors: | Zhang Lin Zhang Yi-Men Zhang Yu-Ming Han Chao and Ma Yong-Ji |
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Affiliation: | School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract: | The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length
method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were
fabricated, and irradiated with 1~MeV electrons up to a dose of
3.43$\times 10^{14}$~e/cm$^{ - 2}$. After radiation, the forward
currents of the SBDs at 2~V decreased by about 50{\%}, and the
reverse currents at $-200$~V increased by less than 30{\%}. Schottky
barrier height ($\phi _{\rm B} )$ of the Ni/4H-SiC SBD increased
from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased
from 1.25~eV to 1.19~eV under $-30$~V irradiation bias. The
degradation of $\phi _{\rm B} $ could be explained by the variation
of interface states of Schottky contacts. The on-state resistance
($R_{\rm s}$) and the reverse current increased with the dose, which
can be ascribed to the radiation defects in bulk material. The
specific contact resistance ($\rho _{\rm c})$ of the Ni/SiC Ohmic
contact increased from 5.11$\times 10^{ -
5}~{\Omega}\cdot$\,cm$^{2}$ to 2.97$\times $10$^{ -
4}~{\Omega}\cdot$\,cm$^{2}$. |
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Keywords: | silicon carbide Schottky
barrier diode Ohmic contact electron radiation |
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