| Analytical analysis of surface potential for grooved-gate MOSFET |
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| 作者姓名： | 张晓菊 龚欣 王俊平 郝跃 |
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| 作者单位： | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 603776024). |
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| 摘 要： | The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.
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| 关 键 词： | 表面位势 晶体管 锐角效应 分析模型 二维Poisson方程 |
| 收稿时间： | 2005-07-26 |
| 修稿时间： | 2005-07-262005-12-28 |
Analytical analysis of surface potential for grooved-gate MOSFET |
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| Zhang Xiao-Ju,Gong Xin,Wang Jun-Ping and Hao Yue.Analytical analysis of surface potential for grooved-gate MOSFET[J].Chinese Physics B,2006,15(3):631-635. |
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| Authors: | Zhang Xiao-Ju Gong Xin Wang Jun-Ping and Hao Yue |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University,Xi'an 710071, China |
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| Abstract: | The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface
potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $\theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity. |
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| Keywords: | surface potential corner effect grooved-gate MOSFET |
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