Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors |
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| Authors: | Dai You-Yong Yan Shi-Shen Tian Yu-Feng Chen Yan-Xue Liu Guo-Lei Mei Liang-Mo |
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| Affiliation: | School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | ![]()
This paper proposes a universal spin-dependent variablerange hopping theoretical model to describe various experimentaltransport phenomena observed in wide-band-gap oxide ferromagneticsemiconductors with high transition metal concentration. Thecontributions of the `hard gap' energy, Coulomb interaction,correlation energy, and exchange interaction to the electricaltransport are considered in the universal variable range hoppingtheoretical model. By fitting the temperature and magnetic fielddependence of the experimental sheet resistance to the theoreticalmodel, the spin polarization ratio of electrical carriers near the Fermilevel and interactions between electrical carriers can beobtained. |
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| Keywords: | variable range hopping ferromagnetic semiconductors electrical transport spin polarization |
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