首页 | 官方网站   微博 | 高级检索  
     


Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor
Authors:Yu Xin-Hai;Chai Chang-Chun;Liu Yang;Yang Yin-Tang;Xi Xiao-Wen
Affiliation:Yu Xin-Hai;Chai Chang-Chun;Liu Yang;Yang Yin-Tang;Xi Xiao-Wen;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University;
Abstract:
Keywords:
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号