| Spin and valley half metal induced by staggered potential and magnetization in siliceneSpin and valley half metal induced by staggered potential and magnetization in siliceneSpin and valley half metal induced by staggered potential and magnetization in silicene |
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| 作者姓名： | 汪萨克 田宏玉 杨永宏 汪军 |
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| 作者单位： | Department of Physics, Southeast University, Nanjing 210096, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 11074032, 11074233, and 11274079） and the Natural Science Foundation of Jiangsu Province, China （Grant No. BK20131284）. |
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| 摘 要： | We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin-orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.
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| 关 键 词： | silicene spin-orbit interaction spin and valley half metal spin and valley blocking effect |
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